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Thin Solid Films

Volumn 506-507, Issue , 2006, Pages 45-49

Plasma enhanced chemical vapor deposition of nitrogen-incorporated silicon oxide films using TMOS/N2O gas

(3) Kang, M S a Chung, T H a Kim, Y a

a Dong A University (South Korea)

Author keywords

Nitrogen incorporated silicon oxide film; Organosilicon source; PECVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LIGHT EMISSION; NITROGEN; PLASMAS; SILICON COMPOUNDS; SPECTROSCOPIC ANALYSIS;

NITROGEN-INCORPORATED SILICON OXIDE FILM; OPTICAL EMISSION SPECTROSCOPY (OES); ORGANOSILICON SOURCE; PECVD; TETRAMETHOXYSILANE (TMOS);

THIN FILMS;

EID: 33645232059 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.08.018 Document Type: Conference Paper

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.