In situ ellipsometry and infrared analysis of PECVD SiO2 films deposited in an O2/TEOS helicon reactor

Journal of Non-Crystalline Solids

Volumn 216, Issue , 1997, Pages 48-54

  Vallee C ^a   Goullet, A ^a   Nicolazo, F ^a   Granier, A ^a   Turban, G ^a  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; FILM GROWTH; IMPURITIES; INFRARED SPECTROSCOPY; PLASMA APPLICATIONS; POROSITY; REFRACTIVE INDEX; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

BRUGGEMAN EFFECTIVE MEDIUM APPROXIMATION (BEMA) TECHNIQUE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); SPECTROSCOPIC ELLIPSOMETER; TETRAETHOXYSILANE;

SILICA;

EID: 0031207157     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(97)00172-5     Document Type: Article

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