Chemical etching of thin SiO x C y H z films by post-deposition exposure to oxygen plasma

Applied Surface Science

Volumn 138-139, Issue 1-4, 1999, Pages 57-61

  Vallee C ^a   Granier, A ^a   Aumaille, K ^a   Cardinaud, C ^a   Goullet, A ^a   Coulon, N ^a   Turban, G ^a  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

AES; Ellipsometry; Etching; PECVD; SiO 2; TEM

Indexed keywords

EID: 0012873752     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00387-0     Document Type: Article

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