Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 719-722

  Esseni, D ^a   Abramo, A ^a   Selmi, L ^a   Sangiorgi, E ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; EIGENVALUES AND EIGENFUNCTIONS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); POISSON EQUATION; SURFACE ROUGHNESS;

OPTICAL PHOTON SCATTERING;

MOSFET DEVICES;

EID: 0036923505     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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