Interface metallization and electrical characterization of Ta-Pt multilayers on n-type SiC

Applied Surface Science

Volumn 255, Issue 5 PART 2, 2008, Pages 3121-3125

  Yang, H ^a   Peng, T H ^a   Wang, W J ^a   Wang, W Y ^a   Chen, X L ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

Carbon vacancy; Ohmic contact; Pt; SiC; Ta

Indexed keywords

ATOMS; AUGER ELECTRON SPECTROSCOPY; BINARY ALLOYS; ELECTRIC CONTACTORS; METALLIZING; OHMIC CONTACTS; SILICIDES; SILICON CARBIDE; TANTALUM; X RAY DIFFRACTION ANALYSIS;

AUGER ELECTRON SPECTROSCOPIES (AES); CARBON VACANCY; CONDUCTING BEHAVIOR; ELECTRICAL CHARACTERIZATION; MICRO-STRUCTURAL PROPERTIES; PLATINUM SILICIDES; SPECIFIC CONTACT RESISTANCES; THERMAL AND ELECTRICAL STABILITY;

PLATINUM;

EID: 56949103162     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.08.112     Document Type: Article

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