Investigation of Ni/Ta contacts on 4H silicon carbide upon thermal annealing

Applied Surface Science

Volumn 254, Issue 1 SPEC. ISS., 2007, Pages 139-142

  Cao, Y ^a   Perez Garcia S A ^a   Nyborg, L ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Interfacial reactions; Metal contact; Nickel; Silicon carbide; Tantalum; Thin films

Indexed keywords

ANNEALING; NICKEL COMPOUNDS; SILICON CARBIDE; SURFACE CHEMISTRY; TANTALUM COMPOUNDS; THICKNESS MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

ELECTRICAL MEASUREMENTS; THERMAL ANNEALING; THICKNESS RATIOS;

THIN FILMS;

EID: 35148835291     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.07.007     Document Type: Article

References (13)

1. Chen J.S., Kolawa E., and Nicolet M.-A. J. Appl. Phys. 76 (1994) 2169
2. Lee D., Do K., Ko D.-H., Choi S., Ku J.H., and Yang K.-W. Mater. Sci. Eng. B 114-115 (2004) 241
3. Asami K., Kawashima A., and Hashimoto K. Mater. Sci. Eng. 99 (1988) 475
4. Fang J.S., Hsu T.P., and Chen G.S. J. Electron. Mater. 33 (2004) 1176
5. Lee P.-Y., Yang J.-L., Lin C.-K., and Lin H.-M. Metall. Mater. Trans. A 28A (1997) 1429
6. Fedorov V.V., Yedneral A.F., Kachalov V.M., and Borisov V.T. Phys. Met. Metallogr. 62 (1986) 96
7. Hollanders M.A., Duterloo C.G., Thijsse B.J., and Mittemeijer E.J. J. Mater. Res. 6 (1991) 1862
8. Zhang Q., Lai W.S., and Liu B.X. Phys. Rev. B 61 (2000) 9345-9355
9. Cao Y., Pérez-García1 S.A., and Nyborg L. Mater. Sci. Forum. 556-557 (2006) 713
10. Yuryeva E.I., and Ivanovskii A.L. Russ. J. Coord. Chem. 28 (2002) 881
11. Hung L.S., Saris F.W., Wang S.Q., and Mayer J.W. J. Appl. Phys. 59 (1986) 2416
12. Lahav A., Eizenberg M., and Komen Y. J. Appl. Phys. 62 (1987) 1768
13. Han S.Y., Kim K.H., Kim J.K., Jang H.W., Lee K.H., Kim N.-K., Kim E.D., and Lee J.-L. Appl. Phys. Lett. 79 (2001) 1816