SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 31, Issue 5, 2002, Pages 506-511

Effects of Si interlayer conditions on platinum ohmic contacts for p-type silicon carbide

(3) Jang, T a Erickson, J W b Porter, L M a

a CARNEGIE MELLON UNIVERSITY (United States)

b Accurel Systems International (United States)

Author keywords

Interlayer; Ohmic contact; p type SiC; Pt; Si; Single phase; Specific contact resistance; TEM; Thermal stability

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC RESISTANCE; PHASE COMPOSITION; PLATINUM; SEMICONDUCTING SILICON; SILICON CARBIDE; THERMAL EFFECTS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

SPECIFIC CONTACT RESISTANCE (SCR);

OHMIC CONTACTS;

EID: 0036575096 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-002-0107-6 Document Type: Article

Times cited : (7)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.