Microstructural interpretation of Ni ohmic contact on n-type 4H-SiC

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1496-1500

  Han, Sang Youn ^a   Shin, Jong Yoon ^a   Lee, Byung Teak ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL MICROSTRUCTURE; ELECTRON TRANSPORT PROPERTIES; ENERGY DISPERSIVE SPECTROSCOPY; GRAPHITE; INTERFACES (MATERIALS); NICKEL; PHASE TRANSITIONS; RAPID THERMAL ANNEALING; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; MICROBEAM DIFFRACTION; MICROSTRUCTURAL CHANGE; NICKEL SILICIDE; SCHOTTKY BARRIER HEIGHT;

OHMIC CONTACTS;

EID: 0035982572     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1495506     Document Type: Article

References (20)