Effects of post-thermal treatment on quality of SiC grown by PVT method

Chinese Physics Letters

Volumn 23, Issue 8, 2006, Pages 2273-2276

  Zhu, Li Na ^a   Chen, Xiao Long ^a   Yang, Hui ^a   Peng, Tong Hua ^a   Ni, Dai Qin ^a   Hu, Bo Qing ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT; SINGLE CRYSTALS; X RAY DIFFRACTION;

FULL WIDTHS AT HALF MAXIMUMS; MICROPIPES; PHYSICAL VAPOR TRANSPORTATIONS; POST THERMAL TREATMENT; QUALITY IMPROVEMENT; ROCKING CURVES; SIC SINGLE CRYSTALS; VAPOR TRANSPORTATION METHODS;

SILICON CARBIDE;

EID: 33746391447     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/23/8/085     Document Type: Article

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