Effect of annealing on electrical properties of Pt/β-SiC contact

Solid-State Electronics

Volumn 45, Issue 9, 2001, Pages 1565-1570

  Na, Hoon Joo ^a   Jeong, Jae Kyeong ^a   Um, Myung Yoon ^a   Kim, Bum Seok ^a   Hwang, Cheol Seong ^a   Kim, Hyeong Joon ^b  

^a Seoul National University   (South Korea)

^b NONE

Author keywords

SiC; Interface trap; Pt contact; Sputter damage

Indexed keywords

ANNEALING; ELECTRIC PROPERTIES; HOLE TRAPS; OHMIC CONTACTS; PLATINUM; SILICON CARBIDE; SPUTTERING; THERMAL EFFECTS;

INTERFACE TRAPS; SPUTTER DAMAGE;

SEMICONDUCTOR JUNCTIONS;

EID: 0035446969     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00167-8     Document Type: Article

References (13)