Impact of high-k gate dielectrics on the device and circuit performance of nanoscale FinFETs

IEEE Electron Device Letters

Volumn 28, Issue 4, 2007, Pages 295-297

  Manoj, C R ^a   Rao, Ramgopal ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

Fin field effect transistors (finfets); Fringinginduced barrier lowering (fibl); High k gate dielectric; Noise margin; Short channel effects (sces)

Indexed keywords

BARRIER LOWERING; FINFETS; HIGH-K GATE DIELECTRICS; NOISE MARGINS; SHORT-CHANNEL EFFECT; FRINGING-INDUCED BARRIER LOWERING;

CAPACITANCE; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRIC NETWORK ANALYSIS; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); GATES (TRANSISTOR); LEAKAGE CURRENTS; NANOTECHNOLOGY; INTEGRATED CIRCUITS; MOSFET DEVICES;

GATE DIELECTRICS;

EID: 37549053754     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.892365     Document Type: Article

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