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Volumn 55, Issue 2, 2008, Pages 609-615

Device design and optimization considerations for bulk FinFETs

Author keywords

Bulk FinFET; Device parasitics; Fringe capacitance; Inverter delay; SOI FinFET

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; INTEGRATED CIRCUIT LAYOUT; OPTIMIZATION; SILICON ON INSULATOR TECHNOLOGY;

EID: 39749142331     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.912996     Document Type: Article
Times cited : (60)

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  • 13
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    • Performance assessment of nanoscale double- and triple-gate FinFETs
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    • A. Kranti and G. A. Armstrong, "Performance assessment of nanoscale double- and triple-gate FinFETs," Semicond. Sci. Technol., vol. 21, pp. 409-421, Feb. 2006.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.