Random-dopant-induced drain current variation in nano-MOSFETs: A three-dimensional self-consistent Monte Carlo simulation study using "Ab Initio" ionized impurity scattering

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3251-3258

  Alexander, Craig ^a   Roy, Gareth ^a   Asenov, Asen ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Intrinsic parameter fluctuations; Monte Carlo (MC); MOSFET

Indexed keywords

CIVIL AVIATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTROSTATICS; IMPURITIES; MONTE CARLO METHODS; MOSFET DEVICES; RANDOM PROCESSES; SCATTERING; SEMICONDUCTOR COUNTERS; SEMICONDUCTOR MATERIALS; SPACE FLIGHT; THREE DIMENSIONAL;

AB INITIO; CARRIER DENSITIES; COULOMB POTENTIALS; COULOMB SCATTERINGS; CURRENT VARIABILITIES; DD APPROACHES; DRAIN BIASES; DRIFT DIFFUSIONS; INTRINSIC PARAMETER FLUCTUATIONS; IONIZED IMPURITY SCATTERINGS; MC SIMULATIONS; MOBILITY MODELS; MONTE CARLO; MONTE CARLO (MC); MONTE CARLO SIMULATIONS; MOS FETS; MOSFET; RELATIVE IMPORTANCES; SIMULATION STUDIES; SPACE TRAJECTORIES; TECHNOLOGY NODES;

DRAIN CURRENT;

EID: 56549097811     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2004647     Document Type: Article

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