Effect of ECR etching conditions of (100)Ib diamond substrates on homoepitaxial low boron doped diamond layer quality

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 9, 2008, Pages 2173-2178

  Volpe, Pierre Nicolas ^a   Muret, Pierre ^a   Omnes, Franck ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON DOPED; CONSTANT DC BIASSED; CRYSTALLINITY; DIAMOND SUBSTRATES; ECR ETCHINGS; ECR PLASMA ETCHINGS; ECR PLASMAS; EFFECT OF OXYGENS; ETCHED SUBSTRATES; EXPERIMENTAL CONDITIONS; GROWTH SECTORS; HOMOEPITAXIAL; INDUCED DEFECTS; MICROWAVE PLASMAS; MICROWAVE POWERS; OXYGEN PLASMAS; POLISHING PROCESSES; POWERFUL TOOLS; SUBSTRATE ETCHINGS; SUBSTRATE ROUGHNESSES; SUBSURFACE DAMAGED; SUBSURFACE DEFECTS; THIN DIAMOND FILMS; TWO PARAMETERS;

BORON; CYCLOTRONS; DIAMOND FILMS; DIAMONDS; ELECTRON CYCLOTRON RESONANCE; ETCHING; IRON COMPOUNDS; KETONES; MICROWAVE GENERATION; MICROWAVE POWER TRANSMISSION; MICROWAVES; NONMETALS; OXYGEN; PLASMA DIAGNOSTICS; PLASMA ETCHING; PLASMAS; POLISHING; SURFACE DEFECTS;

SUBSTRATES;

EID: 54249150519     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200879724     Document Type: Conference Paper

References (52)

1. L. Y. S. Pang, S. M. C. Simon, C. Johnston, P. R. Chalker, and R. B. Jackman, Diam. Relat. Mater. 6, 333 (1997).
2. H. Kiyota, E. Matsushima, K. Sato, H. Okushi, T. Ando, M. Kamo, Y. Sato, and M. Iida, Appl. Phys. Lett. 67, 3596 (1995).
3. I. M. Buckley-Golder, P. R. Chalker, C. Johnston, S. Romani, and M. Werner, in: Adv. in New Diamond Sci. and Technol., edited by S. Salto, N. Fujimori, O. Eukunaga, M. Kamo, K. Kobashi, and M. Yoshikawa (MYU, Tokyo 1994), pp. 669-678, Proceedings of the Fourth Int. Conf. on New Diamond Sci. and Technol., Kobe, Japan, July 1994.
4. D. R. Kania, M. I. Landstrass, and L. S. Pan, Diam. Relat. Mater. 2, 1012 (1993).
5. P. Koidl and C. P. Klages, Diam. Relat. Mater. 1, 1065 (1992).
6. C. Chardonnet, V. Bernard, C. Daussy, E. Anger, and A. Giquel, Appl. Opt. 35, 6692 (1996).
7. T. Teraji, S. Yoshizaki, H. Wada, M. Hamada, and T. Ito, Diam. Relat. Mater. 13, 858 (2004).
8. A. Aleksov, A. Denisenko, U. Spitzberg, T. Jenkins, W. Ebert, and E. Kohn, Diam. Relat. Mater. 11, 382 (2002).
9. A. Aleksov, M. Kubovic, N. Kaeb, U. Spitzberg, A. Bergmaier, G. Dollinger, Th. Bauer, M. Schreck, B. Stritzker, and E. Kohn, Diam. Relat. Mater. 12, 391 (2003).
10. A. Aleksov, A. Denisenko, M. Kunze, A. Vescan, A. Bergmaier, G. Dollinger, W. Ebert, and E. Kohn, Semicond. Sci. Technol. 18, S59 (2003).
11. E. Bustarret, A. Tajani, C. Tavares, M. Wade, C. Baron, E. Gheeraert, S. Koizumi, and D. Araujo, phys. stat. sol. (a) 201, 2462 (2004).
12. A. Giquel, K. Hassouni, F. Silva, and J. Achard, Curr. Appl. Phys. 1, 479 (2001).
13. A. Denisenko and E. Kohn, Diam. Relat. Mater. 14, 491 (2005).
14. A. Aleksov, M. Kubovic, M. Kasu, P. Schimd, D. Grobe, S. Ertl, M. Schreck, B. Stritzker, and E. Kohn, Diam. Relat. Mater. 13, 233 (2004).
15. J. E. Butler, M. W. Geis, K. E. Krohn, J. Lawless Jr., S. Deneault, T. M. Lyszczarz, D. Flechtner, and R. Wright, Semicond. Sci. Technol. 18, S67 (2003).
16. P. R. Chalker, Thin Solid Films 343, 616 (1999).
17. G. A. Shafeev, E. D. Obraztsova, and S. M. Pimenov, Mater. Sci. Eng. B 46, 129 (1997).
18. A. Yoshida, M. Deguchi, M. Kitabatake, T. Hirao, J. Matsuo, N. Toyoda, and I. Yamada, Instrum. Methods B 112, 248 (1996).
19. F. K. de Theije, O. Roy, N. J. Van der Laag, and W. J. P. Van Enckevort, Diam. Relat. Mater. 9, 929 (2000).
20. A. Vescan, W. Ebert, T. H. Borst, and E. Kohn, Diam. Relat. Mater. 5, 747 (1996).
21. C. Tavares, S. Koizumi, and H. Kanda, phys. stat. sol. (a) 202, 2129 (2005).
22. T. Teraji, phys. stat. sol. (a) 203, 3324 (2006).
23. Y. Ando, Y. Nishibayashi, K. Kobashi, T. Hirao, and K. Oura, Diam. Relat. Mater. 11, 824 (2002).
24. I. Bello, M. K. Fung, W. J. Zhang, K. H. Lai, Y. M. Wang, Z. F. Zou, R. K. W. Yu, C. S. Lee, and S. T. Lee, Thin Solid Films 368, 222 (2000).
25. G. Bogdan, M. Nesladek, J. D'Haen, K. Haenen, and M. D'Olieslaeger, Diam. Relat. Mater. 15, 508 (2006).
26. W. Buchkremer-Hermanns, C. Long, and H. Weiss, Diam. Relat. Mater. 5, 845 (1996).
27. S. A. Grot, R. A. Ditizio, G. Sh. Gildenblat, A. R. Badzian, and S. J. Fonash, Appl. Phys. Lett. 61, 2326 (1992).
28. S. Kiyohara, Y. Yagi, and K. Mori, Nanotechnology 10, 385 (1999).
29. S. Nakayama, Pure Appl. Chem. 62, 1751 (1990).
30. G. S. Sandu and W. K. Chu, Appl. Phys. Lett. 5, 437 (1989).
31. R. Rameshaw and B. H. Loo, J. Electrochem. Soc. 139, 1988 (1992).
32. H. A. Nassem, G. M. R. Sirineni, A. P. Malshe, and W. D. Brown, Diam. Relat. Mater. 6, 952 (1997).
33. M. Yamamoto, T. Teraji, and T. Ito, J. Cryst. Growth 285, 130 (2005).
34. P. Muret, P. N. Volpe, F. Omnes, J. Achard, F. Silva, O. Brinza, and A. Giquel, to be published in this issue.
35. A. Tallaire, J. Achard, F. Silva, R. S. Sussmann, A. Giquel, and E. Repzka, phys. stat. sol. 201, 2419 (2004).
36. D. Takeuchi, H. Watanabe, S. Yamanaka, H. Okushi, H. Sawada, H. Ichinose, T. Sekiguchi, and K. Kajimura, Phys. Rev. B 63, 245328 (2001).
37. M. Wade, P. Muret, F. Omnes, and A. Deneuville, Diam. Relat. Mater. 15, 614 (2006).
38. M. Bernard, A. Deneuville, T. Lagarde, E. Treboux, J. Pelletier, P. Muret, N. Casanova, and E. Gheeraert, Diam. Relat. Mater. 11, 828 (2002).
39. M. Bernard, A. Deneuville, L. Ortega, K. Ayadi, and P. Muret, Diam. Relat. Mater. 13, 287 (2004).
40. M. Kadri, C. Baron, and A. Deneuville, Diam. Relat, Mater. 13, 569 (2004).
41. M. Kadri, D. Araujo, M. Wade, A. Deneuville, and E. Bustarret, Diam. Relat. Mater. 14, 566 (2005).
42. G. Davies, Chem. Phys. Carbon, 13, 113 (1977).
43. M. Shimada, I. Watanabe, and Y. Torii, Nucl. Instrum. Methods Phys. Res. B 39, 242-245 (1989).
44. S. Kiyohara, I. Miyamoto, Y. Yagi, and K. Mori, Proc. Int. Conf. on Precission Eng. 2, 637 (1997).
45. S. Kiyohara, Y. Yagi, and K. Mori, Nanotechnology 10, 385 (1999).
46. M. Moisan and J. Pelletier, Physique des plasmas Collisionnels, (EDP Sciences, Grenoble, 2006).
47. S. J. Pearton, A. Katz, F. Ren, and J. R. Lothian, Electron. Lett. 28, 822 (1992).
48. T. Teraji, S. Mitani, and T. Ito, phys. stat. sol. (a) 198, 395 (2003).
49. T. Teraji, S. Yoshizaki, S. Mitani, T. Watanabe, and T. Ito, J. Appl. Phys. 96, 7300 (2004).
50. H. Okushi, Diam. Relat. Mater. 10, 281 (2001).
51. A. M. Zaitsev, Optical Properties of Diamond (Springer-Verlag, Berlin, 2001).
52. M. Kasu, M. Kubovic, A. Aleksov, N. Teofilov, Y. Taniyasu, R. Sauer, E. Kohn, T. Makimoto, and N. Kobayashi, Diam. Relat. Mater. 13, 226 (2004).