Effects at reactive ion etching of CVD diamond

Thin Solid Films

Volumn 368, Issue 2, 2000, Pages 222-226

  Bello, I ^a   Fung, M K ^a   Zhang, W J ^a   Lai, K H ^a   Wang, Y M ^a   Zhou, Z F ^a   Yu, R K W ^a   Lee, C S ^a   Lee, S T ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL VAPOR DEPOSITION; GRAPHITIZATION; HYDROGEN; ION BOMBARDMENT; OXYGEN; PLASMA ETCHING; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; REACTIVE ION ETCHING; SURFACE STRUCTURE;

BIAS INDUCED ELECTRON BOMBARDMENT; BIAS INDUCED ION BOMBARDMENT; HOT FILAMENT PLASMA ETCHING; MICROWAVE ETCHING;

DIAMOND FILMS;

EID: 0033722861     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00769-0     Document Type: Article

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