Influence of epitaxy on the surface conduction of diamond film

Diamond and Related Materials

Volumn 13, Issue 2, 2004, Pages 226-232

  Kasu, M ^a,b   Kubovic, M ^b   Aleksov, A ^b   Teofilov, N ^b   Taniyasu, Y ^a   Sauer, R ^b   Kohn, E ^b   Makimoto, T ^a   Kobayashi, N ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b UNIVERSITY OF ULM   (Germany)

Author keywords

High frequency electronics; Homoepitaxy; Surface electronic properties

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC CURRENTS; EPITAXIAL GROWTH; GATES (TRANSISTOR); SURFACE PROPERTIES;

GATE CURRENT LEAKAGE; HOMOEPITAXIAL LAYERS;

DIAMOND FILMS;

DIAMOND;

EID: 1542318244     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2003.10.025     Document Type: Article

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