Diamond-based electronics for RF applications

Diamond and Related Materials

Volumn 13, Issue 2, 2004, Pages 233-240

  Aleksov, A ^a   Kubovic, M ^a   Kasu, M ^b   Schmid, P ^a   Grobe, D ^a   Ertl, S ^c   Schreck, M ^d   Stritzker, B ^d   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^c GFD Gesellschaft für Diamantprodukte mbH   (Germany)

^d UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Diamond; Electrical properties; FET; MEMS; RF applications

Indexed keywords

ENERGY GAP; FIELD EFFECT TRANSISTORS; POLYCRYSTALLINE MATERIALS; SINGLE CRYSTALS; SURFACE PROPERTIES;

BANDGAP SEMICONDUCTOR DEVICES; INTEGRATED RF ELECTRONICS;

DIAMOND FILMS;

DIAMOND;

EID: 1542318240     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2003.11.090     Document Type: Article

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