Strain induced changes in gate leakage current and dielectric constant of nitrided Hf-silicate metal oxide semiconductor capacitors

Applied Physics Letters

Volumn 93, Issue 15, 2008, Pages

  Son, S Y ^a   Choi, Y S ^a   Kumar, P ^a   Park, H W ^a   Nishida, T ^a   Singh, R K ^a   Thompson, S E ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CERAMIC CAPACITORS; CHARGE COUPLED DEVICES; DIELECTRIC DEVICES; DIELECTRIC WAVEGUIDES; ELECTRIC CONDUCTIVITY; HAFNIUM; HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; MOS CAPACITORS; MOS DEVICES; PERMITTIVITY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR MATERIALS; SILICATES; SILICON; SILICON WAFERS; STRESSES;

[110] DIRECTIONS; BAND GAPS; BAND SPLITTING; DIELECTRIC CONSTANTS; GATE LEAKAGE CURRENTS; GATE LEAKAGES; HAFNIUM OXIDES; HFSION DIELECTRICS; MECHANICAL STRESSES; METAL OXIDES; TENSILE; UNIAXIAL STRESSES; WAFER BENDING;

LEAKAGE CURRENTS;

EID: 54149114176     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3000615     Document Type: Article

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