Breakdown and conduction mechanisms of ALD HfSiON dielectric with TaN gate using carrier separation analysis

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 630-631

  Doh, Seok Joo ^a   Lee, Jung Hyoung ^a   Kim, Jong Pyo ^a   Lee, Jong Ho ^a   Kim, Yun Seok ^a   Lim, Ha Jin ^a   Jung, Hyung Suk ^a   Han, Sung Kee ^a   Kim, Min Joo ^a   Lee, Nae In ^a   Kang, Ho Kyu ^a   Park, Seong Geon ^a   Kang, Sang Bom ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; CONDUCTION MECHANISMS; ELECTRON TRAP; GATE LEAKAGE;

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON TUNNELING; HAFNIUM; LEAKAGE CURRENTS;

DIELECTRIC MATERIALS;

EID: 28744433432     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. K. Sekine, et al., Tech. Dig. IEDM, p.103, 2003.
2. K. Torii, et al., Symp. on VLSI Tech. p. 112, 2004.
3. Y.-S. Kim, et al., accepted in Tech. Dig. IEDM 2004.
4. W. Mizubayashi, et al., Proc. of IRPS, p.188-193, 2004.