Characterization of thermal and electrical stability of MOCVD HfO 2-HfSiO4 dielectric layers with polysilicon electrodes for advanced CMOS technologies

Journal of the Electrochemical Society

Volumn 151, Issue 12, 2004, Pages

  Rittersma, Z M ^a   Loo, J J G P ^a   Ponomarev, Y V ^a   Verheijen, M A ^a   Kaiser, M ^a   Roozeboom, F ^a   Van Elshocht, S ^b   Caymax, M ^c  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b IMEC   (Belgium)

^c IMEC ^*

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; THERMODYNAMIC PROPERTIES; TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC LAYERS; ELECTRICAL STABILITY; EQUIVALENT OXIDE THICKNESS (EOT); POSTDEPOSITION ANNEALING;

DIELECTRIC MATERIALS;

EID: 10844229475     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1814452     Document Type: Review

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