Impact of mechanical stress on direct and trap-assisted gate leakage currents in p -type silicon metal-oxide-semiconductor capacitors

Applied Physics Letters

Volumn 92, Issue 17, 2008, Pages

  Choi, Youn Sung ^a   Nishida, Toshikazu ^a   Thompson, Scott E ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTRON TRAPS; ELECTRON TUNNELING; GATE DIELECTRICS; SILICON; TENSILE STRESS;

MECHANICAL STRESS; SUBSTRATE ELECTRON TUNNELING; TRAP ACTIVATION ENERGY; TRAP ASSISTED TUNNELING;

LEAKAGE CURRENTS;

EID: 43049102361     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2917717     Document Type: Article

References (28)

1. S. E. Thompson, M. Armstrong, C. Auth, M. Alavi, M. Buehler, R. Chau, S. Cea, T. Ghani, G. Glass, T. Hoffman, C. H. Jan, C. Kenyon, J. Klaus, K. Kuhn, Z. Y. Ma, B. Mcintyre, K. Mistry, A. Murthy, B. Obradovic, R. Nagisetty, P. Nguyen, S. Sivakumar, R. Shaheed, L. Shiften, B. Tufts, S. Tyagi, M. Bohr, and Y. El-Mansy, IEEE Trans. Electron Devices 51, 1790 (2004).
2. S. E. Thompson, G. Y. Sun, Y. S. Choi, and T. Nishida, IEEE Trans. Electron Devices 53, 1010 (2006).
3. R. Arghavani, N. Derhacobian, V. Banthia, M. Balseanu, N. Ingle, H. M'Saad, S. Venkataraman, E. Yieh, Z. Yuan, L. Q. Xia, Z. Krivokapic, U. Aghoram, K. MacWilliams, and S. E. Thompson, IEEE Trans. Electron Devices 54, 362 (2007).
4. Y. M. Park, J. S. Lee, M. Kim, M. K. Choi, T. K. Kim, J. I. Han, D. W. Kwon, W. K. Lee, Y. H. Song, and K. D. Suh, Tech. Dig.-Int. Electron Devices Meet. 2001, 32.4.1.
5. J. Om, E. Choi, S. Kim, H. Lee, Y. Kim, H. Chang, S. Park, and G. Bae, IEEE Int. Reliab. Phys. Symp. Proc. 2005, 257.
6. D. J. Dimaria and E. Cartier, J. Appl. Phys. 78, 3883 (1995).
7. B. Ricco, G. Gozzi, and M. Lanzoni, IEEE Trans. Electron Devices 45, 1554 (1998).
8. A. I. Chou, K. Lai, K. Kumar, P. Chowdhury, and J. C. Lee, Appl. Phys. Lett. 70, 3407 (1997).
9. A. Toda, S. Fujieda, K. Kanamori, J. Suzuki, K. Kuroyanagi, N. Kodama, Y. Den, and O. Nishizaka, IEEE Int. Reliab. Phys. Symp. Proc. 2005, 250.
10. H. S. Rhee, H. Lee, T. Ueno, D. S. Shin, S. H. Lee, Y. Kim, A. Samoilov, P.-O. Hansson, M. Kim, H. S. Kim, and N.-I. Lee, Tech. Dig.-Int. Electron Devices Meet. 2005, 692.
11. L. Yan, S. H. Olsen, M. Kanoun, R. Agaiby, and A. G. O'Neill, J. Appl. Phys. 100, 104507 (2006).
12. L. Pantisano and K. Cheung, IEEE Trans. Device Mater. Reliab. 1, 109 (2001).
13. S. E. Thompson, G. Sun, K. Wu, J. Lim, and T. Nishida, Tech. Dig.-Int. Electron Devices Meet. 2004, 9.4.1.
14. Y. T. Hou, M. F. Li, T. Low, and D. L. Kwong, IEEE Trans. Electron Devices 51, 1783 (2004).
15. Y. S. Choi, T. Numata, T. Nishida, R. Harris, and S. Thompson, J. Appl. Phys. 103, 064510 (2008).
16. J. S. Lim, X. Yang, T. Nishida, and S. E. Thompson, Appl. Phys. Lett. 89, 073509 (2006).
17. Y. S. Choi, J.-S. Lim, T. Numata, T. Nishida, and S. Thompson, J. Appl. Phys. 102, 104507 (2007).
18. X. Yang, Y. S. Choi, T. Nishida, and S. E. Thompson, Electron Device and Semiconductor Technology, 2007, 149.
19. W. Zhao, A. Seabaugh, V. Adams, A. Jovanovic, and B. Winstead, IEEE Electron Device Lett. 26, 410 (2005).
20. C. Chaneliere, J. L. Autran, and R. A. B. Devine, J. Appl. Phys. 86, 480 (1999).
21. A. Hamada, T. Furusawa, and E. Takeda, IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 1990, 113.
22. J. T. Yount, P. M. Lenahan, and P. W. Wyatt, J. Appl. Phys. 77, 699 (1995).
23. A. Hamada and E. Takeda, IEEE Electron Device Lett. 15, 31 (1994).
24. A. Hamada and E. Takeda, IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 1992, 98.
25. B. Tuttle and C. G. Van de Walle, Phys. Rev. B 59, 12884 (1999).
26. J. Mitsuhashi, S. Nakao, and T. Matsukawa, Tech. Dig.-Int. Electron Devices Meet. 1986, 386.
27. T. Onizawa, M. Terai, A. Toda, M. Oshida, N. Ikarashi, T. Hase, S. Fujieda, and H. Watanabe, IEEE Int. Reliab. Phys. Symp. Proc. 2006, 195.
28. C. C. Hong and J. G. Hwu, Appl. Phys. Lett. 79, 3797 (2001).