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Electrochemical and Solid-State Letters

Volumn 11, Issue 4, 2008, Pages

An evaluation of Ti-based metal gate electrodes on Hf-silicate dielectrics for dual-metal-gate applications

(8) Son, S Y a Kumar, P a Lee, J S a Cho, H b Jung, H S b Min, K J b Kang, C J b Singh, R K a,c

a UNIVERSITY OF FLORIDA (United States)

b SAMSUNG Electronics (South Korea)

c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTROCHEMICAL ELECTRODES; HAFNIUM COMPOUNDS; HEAT CONDUCTION; MODELS; OXYGEN VACANCIES; TITANIUM COMPOUNDS;

CONDUCTION MECHANISM; HF-SILICATE DIELECTRICS; METAL GATE ELECTRODES; METAL OXIDE SEMICONDUCTOR; POOLE-FRENKEL MODEL;

GATE DIELECTRICS;

EID: 39349093810 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.2837653 Document Type: Article

Times cited : (4)

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