Defect imaging of SiGe strain relaxed buffers grown by LEPECVD

Materials Science in Semiconductor Processing

Volumn 9, Issue 4-5 SPEC. ISS., 2006, Pages 802-805

  Marchionna, S ^a   Virtuani, A ^a   Acciarri, M ^a   Isella, G ^b   von Kaenel, H ^b  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Defects etching; Sige; Threading dislocations; Virtual layers

Indexed keywords

CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

DEFECTS ETCHING; SIGE; THREADING DISLOCATIONS; VIRTUAL LAYERS;

SILICON ALLOYS;

EID: 33845232062     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.09.003     Document Type: Article

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