Atomic composition profile change of SiGe islands during Si capping

Applied Physics Letters

Volumn 89, Issue 10, 2006, Pages

  Li, F H ^a   Fan, Y L ^a   Yang, X J ^a   Jiang, Z M ^a   Wu, Y Q ^b   Zou, J ^b  

^a FUDAN UNIVERSITY   (China)

^b UNIVERSITY OF QUEENSLAND   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANISOTROPY; ATOMIC FORCE MICROSCOPY; COMPOSITION; DIFFUSION; ETCHING; INTERDIFFUSION (SOLIDS); SILICON COMPOUNDS;

ATOMIC SURFACE SEGREGATION; GE ATOMS; SI CAPPING;

ATOMIC PHYSICS;

EID: 33748502127     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2345589     Document Type: Article

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