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Volumn 48, Issue 5, 2004, Pages 837-840
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SiGe resonance phase transistor: Active transistor operation beyond the transit frequency fT
b
DAIMLER AG
(Germany)
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Author keywords
Coherent transport; Current gain; fT; Heterojunction; MBE; Resonance phase transistor (RPT); SiGe; Transit frequency
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Indexed keywords
ADHESION;
ANNEALING;
COMPUTER SIMULATION;
DIFFUSION;
ELECTRIC CONDUCTIVITY;
ETCHING;
EVAPORATION;
HETEROJUNCTIONS;
INTEGRATED CIRCUITS;
METALLIZING;
MOLECULAR BEAM EPITAXY;
NEGATIVE RESISTANCE;
OPTIMIZATION;
PHASE SHIFT;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
COHERENT TRANSPORT;
CURRENT GAIN;
RESONANCE PHASE TRANSISTORS (RPT);
SIGE;
TRANSIT FREQUENCY;
TRANSISTORS;
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EID: 1242276395
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/j.sse.2003.12.007 Document Type: Article |
Times cited : (13)
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References (10)
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