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Volumn 48, Issue 5, 2004, Pages 837-840

SiGe resonance phase transistor: Active transistor operation beyond the transit frequency fT

Author keywords

Coherent transport; Current gain; fT; Heterojunction; MBE; Resonance phase transistor (RPT); SiGe; Transit frequency

Indexed keywords

ADHESION; ANNEALING; COMPUTER SIMULATION; DIFFUSION; ELECTRIC CONDUCTIVITY; ETCHING; EVAPORATION; HETEROJUNCTIONS; INTEGRATED CIRCUITS; METALLIZING; MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; OPTIMIZATION; PHASE SHIFT; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

EID: 1242276395     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.007     Document Type: Article
Times cited : (13)

References (10)
  • 1
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    • Eberhardt J., Kasper E. Modelling of SiGe hetero-bipolar transistor: 200 GHz frequencies with symmetrical delaytimes. Solid State Electron. 45:2001;2097-2100.
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    • Eberhardt, J.1    Kasper, E.2
  • 5
    • 26344476580 scopus 로고    scopus 로고
    • Silicon germanium trends on process integration
    • Kasper E. Silicon germanium trends on process integration. In: ULSI Process Integration II, ECS Proceedings, vol. 2001-2; 2001. p. 143-54.
    • (2001) ULSI Process Integration II, ECS Proceedings , vol.2001-2002 , pp. 143-154
    • Kasper, E.1
  • 6
    • 0027643783 scopus 로고
    • Coherent transistor
    • Grinberg A.A., Luryi S. Coherent transistor. IEEE Trans. Electron. Devices. ED-40:1993;1512-1522 Luryi S., Grinberg A.A., Gorfinkel V.B. Heterostructure bipolar transistors with enhanced forward diffusion of minority carriers. Appl. Phys. Lett. 63:1993;1537-1539.
    • (1993) IEEE Trans. Electron. Devices , vol.ED-40 , pp. 1512-1522
    • Grinberg, A.A.1    Luryi, S.2
  • 7
    • 0012630216 scopus 로고
    • Heterostructure bipolar transistors with enhanced forward diffusion of minority carriers
    • Grinberg A.A., Luryi S. Coherent transistor. IEEE Trans. Electron. Devices. ED-40:1993;1512-1522 Luryi S., Grinberg A.A., Gorfinkel V.B. Heterostructure bipolar transistors with enhanced forward diffusion of minority carriers. Appl. Phys. Lett. 63:1993;1537-1539.
    • (1993) Appl. Phys. Lett. , vol.63 , pp. 1537-1539
    • Luryi, S.1    Grinberg, A.A.2    Gorfinkel, V.B.3
  • 8
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    • Calculation of critical thickness versus lattice mismatch for SiGe/Si strained layer heterostructures
    • People R., Bean J.C. Calculation of critical thickness versus lattice mismatch for SiGe/Si strained layer heterostructures. Appl. Phys. Lett. 47:1985;322-324 People R., Bean J.C. Calculation of critical thickness versus lattice mismatch for SiGe/Si strained layer heterostructures. Appl. Phys. Lett. 49:1986;229.
    • (1985) Appl. Phys. Lett. , vol.47 , pp. 322-324
    • People, R.1    Bean, J.C.2
  • 9
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    • Calculation of critical thickness versus lattice mismatch for SiGe/Si strained layer heterostructures
    • People R., Bean J.C. Calculation of critical thickness versus lattice mismatch for SiGe/Si strained layer heterostructures. Appl. Phys. Lett. 47:1985;322-324 People R., Bean J.C. Calculation of critical thickness versus lattice mismatch for SiGe/Si strained layer heterostructures. Appl. Phys. Lett. 49:1986;229.
    • (1986) Appl. Phys. Lett. , vol.49 , pp. 229
    • People, R.1    Bean, J.C.2
  • 10
    • 0035444020 scopus 로고    scopus 로고
    • Ni/Ag metallization for SiGe HBTs using an Ni silicide contact
    • Eberhardt J., Kasper E. Ni/Ag metallization for SiGe HBTs using an Ni silicide contact. Semiconductor Science and Technology. 16(Sept.):2001;L47-L49.
    • (2001) Semiconductor Science and Technology , vol.16 , Issue.SEPT.
    • Eberhardt, J.1    Kasper, E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.