High-temperature performance of AlGaN/GaN HFETs and MOSHFETs

Microelectronics Reliability

Volumn 48, Issue 10, 2008, Pages 1669-1672

  Donoval, D ^a   Florovic M ^a   Gregusova D ^b   Kovac J ^a   Kordos P ^a,b  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HFETS; HIGH-TEMPERATURE PERFORMANCE;

GALLIUM NITRIDE;

EID: 51049116203     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.04.017     Document Type: Article

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