Material and device issues of AlGaN/GaN HEMTs on silicon substrates

Microelectronics Journal

Volumn 34, Issue 5-8, 2003, Pages 435-437

  Javorka, P ^a   Alam, A ^b   Marso, M ^a   Wolter, M ^a   Kuzmik, J ^a,c   Fox, A ^a   Heuken, M ^b   Kordos P ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b AIXTRON AG   (Germany)

^c INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

GaN based HEMTs; I V characteristics; Si substrates

Indexed keywords

GALLIUM NITRIDE; PHOTOIONIZATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON;

PHOTOIONIZATION SPECTROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037567426     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00067-3     Document Type: Conference Paper

References (7)

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