Performance of AlGaN/GaN heterostructure field-effect transistors at higher ambient temperatures

Journal of Electrical Engineering

Volumn 59, Issue 1, 2008, Pages 53-56

  Florovič, Martin ^a   Kordoš, Peter ^b   Donoval, Daniel ^a   Gregušová, Dagmar ^b   Kováč, Jaroslav ^a  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

AlGaN GaN heterostructure field effect transistors; High ambient temperatures

Indexed keywords

EID: 39149090307     PISSN: 13353632     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (16)

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