Effects of the passivation of SiNx with various growth stoichiometry on the high temperature transport properties of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 369, Issue 3, 2007, Pages 249-254

  Wang, M J ^a   Shen, B ^a   Xu, F J ^a   Wang, Y ^a   Xu, J ^a   Huang, S ^a   Yang, Z J ^a   Qin, Z X ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

2DEG; AlxGa1 xN GaN; High temperature; SiNx; Transport

Indexed keywords

DANGLING BONDS; IONIZATION OF GASES; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; SILICON; SILICON NITRIDE;

ALXGA1-XN/GAN; HIGH TEMPERATURE; HIGH-TEMPERATURE TRANSPORT PROPERTIES; SINX; TRANSPORT; TRANSPORT CHARACTERISTICS; TWO-DIMENSIONAL ELECTRON GAS (2DEG); X RAY PHOTOEMISSION SPECTROSCOPY;

TWO DIMENSIONAL ELECTRON GAS;

EID: 34548499890     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physleta.2007.04.082     Document Type: Article

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