High-temperature transport properties of 2DEG in AlGaN/GaN heterostructures

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 722-725

  Tao, Y Q ^a   Chen, D J ^a   Kong, Y C ^a   Shen, B ^b   Xie, Z L ^a   Han, P ^a   Zhang, R ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

2DEG; AlGaN GaN heterostructure; Transport properties

Indexed keywords

2DEG; ALGAN/GAN HETEROSTRUCTURE; ELECTRON TRANSFER; PHONON SCATTERING;

ALUMINUM COMPOUNDS; BAND STRUCTURE; ELECTRON GAS; HALL EFFECT; HETEROJUNCTIONS; HIGH TEMPERATURE APPLICATIONS; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS;

TRANSPORT PROPERTIES;

EID: 33646740808     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0128-7     Document Type: Conference Paper

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