Effects of dislocation on high temperature transport characteristics of unintentionally doped GaN

Chinese Physics Letters

Volumn 24, Issue 6, 2007, Pages 1682-1685

  Wang, Mao Jun ^a   Shen, Bo ^a   Xu, Fu Jun ^a   Wang, Yan ^a   Xu, Jian ^a   Huang, Sen ^a   Yang, Zhi Jian ^a   Qin, Zhi Xin ^a   Zhang, Guo Yi ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURVE FITTING; III-V SEMICONDUCTORS; TEMPERATURE DISTRIBUTION; X RAY DIFFRACTION;

DENSITY OF DISLOCATION; EFFECT OF DISLOCATIONS; ELECTRONS CONCENTRATION; GAN LAYERS; HALL MEASUREMENTS; HIGHEST TEMPERATURE; PERSISTENT PHOTOCONDUCTIVITY; TEMPERATURE DEPENDENCE; TRANSPORT CHARACTERISTICS; X-RAY DIFFRACTION MEASUREMENTS;

GALLIUM NITRIDE;

EID: 34250005487     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/6/069     Document Type: Article

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