High temperature Hall effect sensors based on AlGaN/GaN heterojunctions

Journal of Applied Physics

Volumn 99, Issue 11, 2006, Pages

  Lu, Hai ^a   Sandvik, Peter ^a   Vertiatchikh, Alexei ^a   Tucker, Jesse ^a   Elasser, Ahmed ^a  

^a GE GLOBAL RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FREE ELECTRONS; HALL EFFECT SENSORS; HETEROINTERFACE; MAGNETIC SENSITIVITY; POLAR OPTICAL SCATTERING;

ALUMINUM ALLOYS; ELECTRON GAS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; MAGNETIC PROPERTIES; POLARIZATION; SCATTERING;

SENSORS;

EID: 33745282120     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2201339     Document Type: Article

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