On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT

IEEE Transactions on Electron Devices

Volumn 53, Issue 3, 2006, Pages 565-567

  Oxley, C H ^a   Uren, M J ^b   Coates, A ^a   Hayes, D G ^b  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

GaN; Heterojunction field effect transistor (HFET); High electron mobility transistor (HEMT); Quasi static model; Saturation velocity; Sheet carrier concentration

Indexed keywords

CARRIER CONCENTRATION; GALLIUM NITRIDE; HETEROJUNCTIONS; MATHEMATICAL MODELS; SCATTERING PARAMETERS; SEMICONDUCTING ALUMINUM COMPOUNDS; TEMPERATURE;

ELECTRON SATURATION VELOCITY; QUASI-STATIC MODEL; SHEET CARRIER CONCENTRATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33244462402     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.863540     Document Type: Article

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