High temperature dependence of the density of two-dimensional electron gas in Al0.18Ga0.82N/GaN heterostructures

Applied Physics A: Materials Science and Processing

Volumn 88, Issue 4, 2007, Pages 715-718

  Wang, M J ^a   Shen, B ^a   Xu, F J ^a   Wang, Y ^a   Xu, J ^a   Huang, S ^a   Yang, Z J ^a   Xu, K ^a   Zhang, G Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HALL EFFECT; HETEROJUNCTIONS; TEMPERATURE MEASUREMENT;

HALL MEASUREMENTS; TEMPERATURE DEPENDENCE;

ELECTRON GAS;

EID: 34547249269     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-007-4034-5     Document Type: Article

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