Nitrogen-rich indium nitride

Journal of Applied Physics

Volumn 95, Issue 11 I, 2004, Pages 6124-6128

  Butcher, K S A ^a   Wintrebert Fouquet, M ^a   Chen, P P T ^a   Tansley, T L ^a   Dou, H ^a   Shrestha, S K ^b   Timmers, H ^b,e   Kuball, M ^c   Prince, K E ^d   Bradby, J E ^e  

^a MACQUARIE UNIVERSITY   (Australia)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c UNIVERSITY OF BRISTOL   (United Kingdom)

^d AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

^e AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CORRELATION METHODS; ELASTICITY; ELECTRONS; FILM GROWTH; ION BEAMS; IONS; MOLECULAR BEAM EPITAXY; NITROGEN; RAMAN SPECTROSCOPY; SAMPLING; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; STOICHIOMETRY; ULTRAVIOLET SPECTROSCOPY; X RAY DIFFRACTION;

ANTI-SITE DEFECTS; DEFECT STRUCTURES; ELASTIC RECOIL DETECTION (ERD); ELEMENTAL COMPOSITION;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 2942653173     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1711173     Document Type: Article

References (23)

1. T. Inushima, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, T. Sakon, M. Motokawa, and S. Ohoya, J. Cryst. Growth 227-228, 481 (2001).
2. J. Wu, W. Waluklewiez, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, W. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
3. V. Tu Davydov, A. A. Klochikhin, V. V. Emtsev, D. A. Kurdyukov, S. V. Ivanov, V. A. Vekshin, F. Bechstedt, J. Furthmuller, I. Aderhold, J. Graul, A. V. Mudryi, H. Harima, A. Hashimoto, A. Yamamoto, and E. E. Haller, Phys. Status Solidi B 234, 787 (2002).
4. K. S. A. Butcher, M. Wintrebert-Fouquet, Motlan, S. K. Shrestha, H. Timmers, K. E. Prince, and T. L. Tansley, in the Material Research Society Fall 2002 Conference Proceedings (to be published).
5. T. L. Tansley and C. P. Foley, Electron. Lett. 20, 1066 (1984).
6. V. W. L. Chin, T. L. Tansley, and T. Osotchan, J. Appl. Phys. 75, 7365 (1994).
7. C. Stampfl, C. G. Van de Walle, D. Vogel, P. Kruger, and J. Pollmann, Phys. Rev. B 61, R7846 (2000).
8. S. Limpijuranong and C. G. Van de Walle, Phys. Status Solidi B 228, 303 (2001).
9. T. L. Tansley and R. J. Egan, Phys. Rev. B 45, 10942 (1992).
10. M. R. Ranade, F. Tessier, A. Navrotsky, and R. Marchand, J. Mater. Res. 16, 2824 (2001).
11. H. Timmers, T. D. M. Weijers, and R. G. Elliman, Nucl. Instrum. Methods Phys. Res. B 190, 393 (2002).
12. K. S. A. Butcher, H. Timmers, Afifuddin, P. P.-T. Chen, T. D. M. Weijers, E. M. Goldys, T. L. Tansley, R. G. Elliman, and J. A. Freitas, Jr., J. Appl. Phys. 92, 3397 (2002).
13. Afifuddin, K. S. A. Butcher. T. L. Tansley, H. Timmers, R. G. Elliman, T. D. M. Weyers, and T. R. Ophel, The Properties of GaN Films Grown by Plasma Assisted Laser-Induced Chemical Vapour Deposition, 2000 International Semiconducting and Insulating Materials Conference Proceedings (IEEE, Piscataway NJ, 2000), pp. 51-54.
14. H. Timmers, T. R. Ophel, and R. G. Elliman, Nucl. Instrum. Methods Phys. Res. B 161-163, 19 (2000).
15. S. K. Shrestha, H. Timmers, K. S. A. Butcher, and M. Wintrebert-Fouquet, Proceedings of the International Conference on Advanced Materials and Nanotechnology, Wellington, New Zealand (2003), Current Appl. Phys. (to be published).
16. S. K. Shrestha, H. Timmers, K. S. A. Butcher, and M. Wintrebert-Fouquet, Nucl. Instrum. Methods Phys. Res. B (to be published).
17. H. Lu, W. J. Schaff, J. Hwang, H. Wu, G. Koley, and L. F. Eastman, Appl. Phys. Lett. 79, 1489 (2001).
18. S. Kumar, L. Mo, Motlan, and T. L. Tansley, Jpn. J. Appl. Phys., Part 1 35, 2261 (1996).
19. O. Lagerstedt and B. Monemar, Phys. Rev. B 19, 3064 (1979).
20. T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986).
21. W. Paszkowicz, R. Cerny, and S. Krukowski, Powder Diffr. 18, 114 (2003).
22. C. Stampfl, Sydney University, Australia (private communication).
23. Y. Gao, Surf. Interface Anal. 14, 552 (1989).