MOVPE growth and photoluminescence of wurtzite InN

Journal of Crystal Growth

Volumn 269, Issue 1, 2004, Pages 139-144

  Matsuoka, T ^a   Okamoto, H ^b   Takahata, H ^c   Mitate, T ^c   Mizuno, S ^c   Uchiyama, Y ^d   Makimoto, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

^c NTT Advanced Technology Corporation   (Japan)

^d MEIJI UNIVERSITY   (Japan)

Author keywords

A1. Optical absorption; A3. Vapor phase epitaxy; B1. InN; B2. III V Semiconductors

Indexed keywords

ANNEALING; CONTAMINATION; DECOMPOSITION; INDIUM; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR LASERS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); EXCITATION LIGHT SOURCE; EXCITATION POWERS; VAPOR-PHASE EPITAXY;

PHOTOLUMINESCENCE;

EID: 3342996861     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.057     Document Type: Conference Paper

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