Electrical and optical properties of InN films prepared by reactive sputtering

Applied Surface Science

Volumn 169-170, Issue , 2001, Pages 349-352

  Saito, N ^a   Igasaki, Y ^b  

^a NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

^b SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CARRIER CONCENTRATION; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; ENERGY GAP; FILM PREPARATION; MAGNETRON SPUTTERING; NITROGEN; PRESSURE EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; SPUTTER DEPOSITION; THIN FILMS;

INDIUM NITRIDE; REACTIVE MAGNETRON SPUTTERING;

SEMICONDUCTING FILMS;

EID: 18344407251     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00676-0     Document Type: Article

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