Defects in silicon: The role of vibrational entropy

Solid State Communications

Volumn 128, Issue 5, 2003, Pages 181-185

  Sanati, M ^a   Estreicher, S K ^a  

^a TEXAS TECH UNIVERSITY   (United States)

Author keywords

A. Semiconductors; C. Impurities in semiconductors; C. Point defects; D. Thermodynamic properties

Indexed keywords

BINDING ENERGY; CRYSTAL DEFECTS; ENTROPY; FREE ENERGY; MOLECULAR VIBRATIONS;

VIBRATIONAL ENTROPY;

SEMICONDUCTING SILICON;

EID: 0141859738     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2003.08.005     Document Type: Article

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