Similarities in the electrical properties of transition metal-hydrogen complexes in silicon

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 58, Issue 1, 1999, Pages 134-140

  Sachse, J U ^a,d   Sveinbjornsson E O ^b   Yarykin, N ^c   Weber, J ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^d SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTALLINE MATERIALS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ETCHING; GOLD; HEAT TREATMENT; HYDROGEN; PALLADIUM; PLATINUM; SCHOTTKY BARRIER DIODES; SILVER;

WET ETCHING;

SEMICONDUCTING SILICON;

EID: 0345072502     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00282-7     Document Type: Article

References (24)

1. S.J. Pearton, E.E. Haller, J. Appl. Phys. 54 (1983) 3613.
2. S.J. Pearton, in: J.I. Pankove, N.M. Johnson (Eds.), Semiconductors and Semimetals, Academic, San Diego, CA, 1991, p. 65.
3. E.Ö. Sveinbjörnsson, O. Engström, Appl. Phys. Lett. 61 (1992) 2323.
4. E.Ö Sveinbjörnsson, O. Engström, Phys. Rev. B52 (1995) 4884.
5. T. Sadoh, H. Nakashima, T. Tsurushima, J. Appl. Phys. 72 (1992) 520.
6. T. Sadoh, M. Watanabe, H. Nakashima, T. Tsurushima, J. Appl. Phys. 75 (1994) 3978.
7. H. Feichtinger, E. Sturm, Mater. Sci. Forum 143-147 (1994) 111.
8. W. Jost, J. Weber, Phys. Rev. B54 (1996) R11038.
9. W. Jost, J. Weber, H. Lemke, Semicond. Sci. Technol. 11 (1996) 22.
10. O.V. Feklisova, N.A. Yarykin, Semicond. Sci. Technol. 12 (1997) 742.
11. G.D. Watkins, Physica 117B-118B (1983) 9.
12. H. Lemke, in: H.R. Huff, W. Bergholz, K. Sumino (Eds.), Semiconductor Silicon, The Electrochemical Society, Pennington, NJ, 1994, p. 695.
13. A.J. Tavendale, A.A. Williams, S.J. Pearton, in: M. Stavola, S.J. Pearton, G. Davies (Eds.), Defects in Electronic Materials, MRS Symposia Proceedings No. 104, Materials Research Society, Pittsburgh, PA, 1988, p. 285.
14. T. Zundel, J. Weber, Phys. Rev B39 (1989) 13549.
15. H.G. Grimmeiss, E. Janzén, B. Skarstam, A. Lodding, J. Appl. Phys. 51 (1980) 6238.
16. D.V. Lang, J. Appl. Phys. 45 (1974) 3023.
17. H. Zimmermann, H. Ryssel, Appl. Phys. Lett. 58 (1991) 499.
18. J.-U. Sachse, W. Jost, J. Weber, H. Lemke, Appl. Phys. Lett. 71 (1997) 1379.
19. J.-U. Sachse, E.Ö. Sveinbjörnsson, W. Jost, J. Weber, H. Lemke, Phys. Rev. B55 (1997) 16176.
20. J.-U. Sachse, J. Weber, H. Lemke, Mater. Sci. Forum 258-263 (1997) 307.
21. N. Yarykin, J.-U. Sachse, J. Weber, H. Lemke, Mater. Sci. Forum 258-263 (1997) 301.
22. S.J. Uftring, M. Stavola, P.M. Williams, G.D. Watkins, Phys. Rev. B51 (1995) 9612.
23. A. Resende, private communication.
24. J.-U. Sachse, PhD Thesis University of Stuttgart, 1997, submitted for publication.