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Physical Review Letters

Volumn 82, Issue 10, 1999, Pages 2111-2114

Calculations of electrical levels of deep centers: Application to Au-H and Ag-H defects in silicon

(4) Resende, A a Jones, R a Oberg S b Briddon, P R c

a UNIVERSITY OF EXETER (United Kingdom)

b LULEÅ UNIVERSITY OF TECHNOLOGY (Sweden)

c NEWCASTLE UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001644424 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.82.2111 Document Type: Article

Times cited : (124)

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