Evolution of copper-hydrogen-related defects in silicon

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 404-407

  Knack, S ^a   Weber, J ^a   Lemke, H ^b   Riemann, H ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Copper; Defect reactions; Hydrogen; Silicon

Indexed keywords

ANNEALING; COPPER; CRYSTAL GROWTH; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIFFUSION; ETCHING; HYDROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

DEFECT REACTIONS;

CRYSTAL DEFECTS;

EID: 18544397847     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00763-3     Document Type: Article

References (19)