The electronic properties of transition metal hydrogen complexes in silicon

Materials Science and Engineering: B

Volumn 58, Issue 1-2, 1999, Pages 113-117

  Jones, R ^a   Resende, A ^a   Oberg S ^b   Briddon, P R ^c  

^a UNIVERSITY OF EXETER   (United Kingdom)

^b LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Ab initio theory; Complexes; H; Si; Transition metal impurities

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; ENERGY GAP;

SPIN-POLARIZED LOCAL DENSITY FUNCTIONAL CLUSTER THEORY;

SEMICONDUCTING SILICON;

EID: 0345504132     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00293-1     Document Type: Article

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