Lattice location of implanted Cu in highly doped Si

Applied Physics Letters

Volumn 77, Issue 14, 2000, Pages 2142-2144

  Wahl, U ^a   Vantomme, A ^a   Langouche, G ^a   Araujo J P ^b   Peralta, L ^c   Correia, J G ^d,e  

^a KU LEUVEN   (Belgium)

^b UNIVERSITY OF PORTO   (Portugal)

^c UNIVERSITY OF LISBON   (Portugal)

^d CERN   (Switzerland)

^e INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001455653     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1314876     Document Type: Article

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