Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 4, 2008, Pages 1551-1559

  Yoshikawa, A ^a   Che, S B ^a   Hashimoto, N ^a   Saito, H ^a   Ishitani, Y ^a   Wang, X Q ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; MATRIX ALGEBRA; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTICAL DESIGN; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; WELLS;

CRITICAL THICKNESSES; ENHANCED SURFACES; FINE STRUCTURES; GROWTH REGIMES; HETERO INTERFACES; HETEROSTRUCTURES; HIGH-QUALITY; HIGHER TEMPERATURES; IN-BETWEEN; MISFIT DISLOCATION; MQW STRUCTURES; MULTIPLE QUANTUM WELLS; NEW GENERATION; PHOTONIC DEVICES; QUANTUM WELLS; ROOM TEMPERATURES; SELF-ORDERING; SHORT WAVELENGTHS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 49749113803     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2957620     Document Type: Article

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