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Volumn 281, Issue 2-4, 2005, Pages 349-354

Nanostructure formation and emission characterization of blue emission InN/GaN quantum well with thin InN well layers

(9) Cho, Hyung Koun a Kim, Dong Chan a Kong, Bo Hyun a Lee, Kyu Han b Oh, Jeong Tak b Kim, Sunwoon b Kim, Dong Jun b Kim, Je Won b Hong, Soon Ku c

a Dong A University (South Korea)

b Samsung Electro Mechanics (South Korea)

c Chungnam National University (South Korea)

Author keywords

A1. Characterization; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ACTIVATION ENERGY; COMPOSITION; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; NITRIDES; SEMICONDUCTING INDIUM COMPOUNDS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BLUE EMISSION; CRYSTAL QUALITY; NANOSTRUCTURES; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 22144435963 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.04.068 Document Type: Article

Times cited : (18)

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