Proposal and achievement of novel structure InNGaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

Applied Physics Letters

Volumn 90, Issue 7, 2007, Pages

  Yoshikawa, A ^a   Che, S B ^a   Yamaguchi, W ^a   Saito, H ^a   Wang, X Q ^a   Ishitani, Y ^a   Hwang, E S ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; GALLIUM NITRIDE; MONOLAYERS; SEMICONDUCTING INDIUM COMPOUNDS;

EXCITONIC DEVICES; GROWTH TEMPERATURE; ROOM TEMPERATURE; SHORT-WAVELENGTH VISIBLE COLORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33847141433     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2456132     Document Type: Article

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