Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy

Applied Physics Letters

Volumn 86, Issue 15, 2005, Pages 1-3

  Yoshikawa, A ^a   Hashimoto, N ^a   Kikukawa, N ^a   Che, S B ^a   Ishitani, Y ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELLIPSOMETRY; ENERGY GAP; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ENERGY ELECTRON DIFFRACTION; LIGHT MODULATORS; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS;

PHOTONIC DEVICES; QUATERNARY ALLOYS; SPECTROSCOPIC ELLIPSOMETRY; STRANSKI-KRASTANOV (S-K) MODE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20844451701     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1900948     Document Type: Article

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