Cathodoluminescence study on spatial luminescence properties of InN/GaN multiple quantum wells consisting of 1-monolayer-thick InN wells/GaN matrix

Journal of Electronic Materials

Volumn 37, Issue 5, 2008, Pages 597-602

  Hwang, E S ^a   Che, S B ^a   Saito, H ^a   Wang, X ^a   Ishitani, Y ^a   Yoshikawa, A ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

Cathodoluminescence; Exciton localization; GaN matrix; InN GaN MQWs; RF plasma assisted MBE

Indexed keywords

DOMINANT EMISSION PEAKS; EFFICIENT LOCALIZATION; EXCITON LOCALIZATION;

CATHODOLUMINESCENCE; CHARACTERIZATION; DEFECTS; EXCITONS; GALLIUM NITRIDE; MONOLAYERS; THICKNESS MEASUREMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 42249115062     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0363-6     Document Type: Conference Paper

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