Growth of In-polar and N-polar InN nanocolumns on GaN templates by molecular beam epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1561-1565

  Wang, Xinqiang ^a   Che, Song Bek ^a   Ishitani, Yoshihiro ^a   Yoshikawa, Akihiko ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; GAN TEMPLATES; GROWTH TEMPERATURE; INN NANOCOLUMNS; 68.37.HK; 68.65.LA; 78.55.CR; 81.05.EA; 81.15.HI; 81.16.DN;

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION; EPITAXIAL GROWTH; GROWTH TEMPERATURE; INDIUM; SEMICONDUCTING GALLIUM COMPOUNDS;

NANOSTRUCTURED MATERIALS; FILM GROWTH;

EID: 33746367761     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565327     Document Type: Conference Paper

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