Fabrication and properties of coherent-structure In-polarity InN/In 0.7 Ga0.3N multiquantum wells emitting at around 1.55 μ m

Journal of Applied Physics

Volumn 102, Issue 8, 2007, Pages

  Che, Song Bek ^a   Mizuno, Tomoyasu ^a   Wang, Xinqiang ^a   Ishitani, Yoshihiro ^a   Yoshikawa, Akihiko ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL THICKNESS; LATTICE RELAXATION; MULTIQUANTUM WELLS; PHOTOLUMINESCENCE PROPERTIES; PIEZO-ELECTRIC FIELDS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; QUANTUM-CONFINED STARK EFFECT; THEORETICAL ESTIMATION;

MOLECULAR BEAM EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84893256770     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2800843     Document Type: Article

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